cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 1/8 MTN14N45E3 cystek product specification n-channel enhancement mode power mosfet r ds(on) : 0.5 i d : 14a bv dss : 450v MTN14N45E3 description the MTN14N45E3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-220 package is universally preferred for all commercial-industrial applications features ? bv dss =500v typically @ tj=150 ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package applications ? power factor correction ? flat panel power ? full and half bridge power supplies ? two-transistor forward power supplies symbol outline to-220 MTN14N45E3 d drain s source g gate g d s
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 2/8 MTN14N45E3 cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage (note 1) v ds 450 v gate-source voltage v gs 30 v continuous drain current i d 14* a continuous drain current @t c =100c i d 8.4* a pulsed drain current @ v gs =10v (note 2) i dm 56* a single pulse avalanche energy (note 3) e as 660 mj avalanche current (note 2) i ar 14 a repetitive avalanche energy (note 2) e ar 17 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns maximum temperature for solder ing @ lead at 0.125 in(3.175mm) from case for 10 seconds t l 300 c w total power dissipation (t c =25 ) linear derating factor above 25 p d 170 1.35 w/ c operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature note : 1 . tj=+25 to +150 . 2 . repetitive rating; pulse width limited by maximum junction temperature. 3 . i sd =14a, di/dt<100a/ s, v dd cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 3/8 MTN14N45E3 cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 450 - - v v gs =0, i d =250 a bv dss - 500 - v v gs =0, i d =250 a, tj=150 c ? bv dss / ? tj - 0.5 - v/ c reference to 25c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 5 - s v ds =15v, i d =7a i gss - - 100 na v gs = 30 - - 1 v ds =450v, v gs =0 i dss - - 25 a v ds =360v, v gs =0, tj=125 c *r ds(on) - - 0.5 v gs =10v, i d =7a dynamic *qg - 45 - *qgs - 11 - *qgd - 22 - nc i d =14a, v dd =250v, v gs =10v *t d(on) - 40 - *tr - 140 - *t d(off) - 100 - *t f - 85 - ns v dd =250v, i d =14a, v gs =10v, r g =10 ciss - 1800 - coss - 245 - crss - 25 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *v sd - - 1.5 v i s =7a, v gs =0v *i s - - 14 *i sm - - 56 a v d =v g =0, v s =1.3v *trr - 290 - ns *qrr - 2.6 - c v gs =0, i f =14a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTN14N45E3 to-220 (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton 14n45
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 4/8 MTN14N45E3 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 5/8 MTN14N45E3 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 6/8 MTN14N45E3 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 7/8 MTN14N45E3 cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c717e3 issued date : 2009.06.05 revised date : page no. : 8/8 MTN14N45E3 cystek product specification to-220 dimension style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-220 plastic package cystek package code: e3 marking: 14n45 device name date code *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2441 0.2598 6.20 6.60 i - * 0.1508 - * 3.83 b 0.3386 0.3543 8.60 9.00 k 0.0299 0.0394 0.76 1.00 c 0.1732 0.1890 4.40 4.80 m 0.0461 0.0579 1.17 1.47 d 0.0492 0.0571 1.25 1.45 n - * 0.1000 - * 2.54 e 0.0142 0.0197 0.36 0.50 o 0.5217 0.5610 13.25 14.25 g 0.3858 0.4094 9.80 10.40 p 0.5787 0.6024 14.70 15.30 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc ; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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